01
940nm High Power VCSEL Epi wafer
(Conventional Technology)
- Low threshold current
- Low beam divergence
- High power conversion efficiency
- High reliability
- Suitable for the fabrication of both single emitter and multiple emitter array
02
850nm VCSEL Epi wafer
- Low threshold current
- Low beam divergence
- High reliability
- High speed of >10GHz for single emitter chip
- Suitable for the fabrication of both single emitter and multiple emitter array
03
940nm High Power VCSEL Epi wafer
(Proprietary Technology)
- High oxidation process yield on wafer and batch-to-batch
- High throughput oxidation process-batch process capability for oxidation
- Very high reliability
- Suitable for the fabrication of both single emitter and multiple emitter array
- Best candidate for the high power single emitter VCSEL